JPH0743779Y2 - 光ピックアップ - Google Patents
光ピックアップInfo
- Publication number
- JPH0743779Y2 JPH0743779Y2 JP1989015879U JP1587989U JPH0743779Y2 JP H0743779 Y2 JPH0743779 Y2 JP H0743779Y2 JP 1989015879 U JP1989015879 U JP 1989015879U JP 1587989 U JP1587989 U JP 1587989U JP H0743779 Y2 JPH0743779 Y2 JP H0743779Y2
- Authority
- JP
- Japan
- Prior art keywords
- light beam
- photodetector
- polarized
- component
- polarized component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims description 32
- 230000005540 biological transmission Effects 0.000 claims description 12
- 238000009827 uniform distribution Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000010287 polarization Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011295 pitch Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989015879U JPH0743779Y2 (ja) | 1989-02-13 | 1989-02-13 | 光ピックアップ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989015879U JPH0743779Y2 (ja) | 1989-02-13 | 1989-02-13 | 光ピックアップ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02110024U JPH02110024U (en]) | 1990-09-03 |
| JPH0743779Y2 true JPH0743779Y2 (ja) | 1995-10-09 |
Family
ID=31228323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989015879U Expired - Lifetime JPH0743779Y2 (ja) | 1989-02-13 | 1989-02-13 | 光ピックアップ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0743779Y2 (en]) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62281146A (ja) * | 1986-05-30 | 1987-12-07 | Seiko Epson Corp | 光磁気信号検出方法 |
-
1989
- 1989-02-13 JP JP1989015879U patent/JPH0743779Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02110024U (en]) | 1990-09-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |